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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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The contacting surface of P- and N-type semiconductors is a PN junction.
When P-type and N-type come into contact, carriers, which are holes and free electrons, are attracted to each other, recombine at the junction of P-type and N-type, and disappear. Because there are no carriers near the junction, it is called a depletion layer, and it becomes the same state as an insulator. When voltage is applied by connecting P-type to "+" electrode and N-type to "-" electrode, electrons flow from N-type region to P-type region, electrons that did not disappear through recombination with holes move to “+” electrode, and current flows. The same mechanism applies to holes in P-type region.